Gas barrier film, method of manufacturing gas barrier film, and organic photoelectric conversion element

摘要

Disclosed is a gas barrier film which has both high gas barrier performance and high cracking (bending) resistance. Specifically disclosed is a gas barrier film which comprises, on a substrate in the following order, at least one silanol-containing layer and at least one gas barrier layer that contains silicon atoms and hydrogen atoms. The gas barrier film is characterized in that the relative SiOH ion strength in the central part of the silanol-containing layer in the film thickness direction as detected by time-of-flight secondary ion mass spectrometry (Tof-SIMS) is 0.02-1.0 when the relative Si ion strength is taken as 1. Also disclosed is an organic photoelectric conversion element which comprises the gas barrier film.

主权项

1. A gas barrier film comprising a substrate having thereon at least one silanol-containing layer and at least one gas barrier layer in that order, the gas barrier layer containing silicon atoms and oxygen atoms, wherein
a relative SiOH ionic strength detected from a central portion of the silanol-containing layer with respect to the depth direction thereof is from 0.2 to 1.0, provided that a relative Si ionic strength is set to 1.0, the relative SiOH ionic strength and the relative Si ionic strength being detected via time-of-flight secondary ion mass spectroscopy (Tof-SIMS).