发明名称 Image sensing device including through vias electrically connecting imaging lens unit to image sensors
摘要 According to one embodiment, a solid-state image sensing device includes a semiconductor substrate on which a plurality of pixels are arranged, a transparent substrate including a first through via provided in an opening formed in advance to extend through, an adhesive including a second through via connected to the first through via and configured to bond the semiconductor substrate and the transparent substrate while exposing the pixels, and an imaging lens unit arranged on the transparent substrate.
申请公布号 US8754494(B2) 申请公布日期 2014.06.17
申请号 US201113234471 申请日期 2011.09.16
申请人 Kabushiki Kaisha Toshiba 发明人 Kawasaki Atsuko;Hagiwara Kenichiro;Sekine Hirokazu
分类号 H01L31/0203;H01L31/0232;H01L27/146;G03B17/00;H04N5/225 主分类号 H01L31/0203
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A solid state image sensing device comprising: a semiconductor substrate on which a plurality of pixels are arranged; a transparent substrate including a first hole therein and including a first through via provided in the first hole; an adhesive including a second hole therein, including a second through via provided in the second hole and connected to the first through via, and configured to bond the semiconductor substrate and the transparent substrate while exposing the pixels; an imaging lens unit arranged on the transparent substrate; a back redistribution layer arranged on a lower surface of the semiconductor substrate; and a third through via electrically connected to the first through via, the second through via, and the back redistribution layer.
地址 Tokyo JP