Three-dimensional semiconductor memory devices

摘要

Three-dimensional (3D) semiconductor memory devices are provided. According to the 3D semiconductor memory device, a gate structure includes gate patterns and insulating patterns alternately stacked on a semiconductor substrate. A vertical active pattern penetrates the gate structure. A gate dielectric layer is disposed between a sidewall of the vertical active pattern and each of the gate patterns. A semiconductor pattern is disposed on the gate structure and is connected to the vertical active pattern. A string drain region is formed in a portion of the semiconductor pattern and is spaced apart from the vertical active pattern.

主权项

1. A three-dimensional (3D) semiconductor memory device comprising:
a gate structure including gate patterns and insulating patterns alternately stacked on a semiconductor substrate; a vertical active pattern penetrating the gate structure; a gate dielectric layer disposed between a sidewall of the vertical active pattern and each of the gate patterns; a semiconductor pattern disposed on the gate structure, the semiconductor pattern connected to the vertical active pattern; and a string drain region formed in a portion of the semiconductor pattern, the string drain region spaced apart from the vertical active pattern.