Non-volatile memory devices including gates having reduced widths and protection spacers and methods of manufacturing the same

摘要

Non-volatile memory devices and methods of manufacturing the same are disclosed. In a non-volatile memory device, widths of a metal gate and an upper portion of a base gate in a gate electrode are less than the width of a hard mask pattern disposed on the metal gate. First and second protection spacers are disposed on opposing sidewalls of the metal gate and on opposing sidewalls of the upper portion of the base gate, respectively.

主权项

1. A non-volatile memory device comprising:
a base gate, a metal gate, and a hard mask pattern sequentially stacked on a semiconductor layer, a first width of a lower portion of the metal gate and a second width of an upper portion of the base gate being less than a third width of the hard mask pattern; a first protection spacer on a first sidewall of the metal gate and a first sidewall of the upper portion of the base gate; a second protection, spacer on a second sidewall of the metal gate and a second sidewall of the upper portion of the base gate; and a tunnel dielectric layer, a charge storage layer and a blocking dielectric layer sequentially stacked between the semiconductor layer and the base gate; wherein the first and second sidewalls of the metal gate and the upper portion of the base gate define respective first and second undercut regions, wherein the first and second protection spacers are in the first and second undercut regions; and wherein the first and second undercut regions extend into the base gate and the metal gate beneath overhanging portions of the metal gate that have a fourth width that is greater than the second width.