Nanowire photo-detector grown on a back-side illuminated image sensor

摘要

An embodiment relates to a device comprising a substrate having a front side and a back-side that is exposed to incoming radiation, a nanowire disposed on the substrate and an image sensing circuit disposed on the front side, wherein the nanowire is configured to be both a channel to transmit wavelengths up to a selective wavelength and an active element to detect the wavelengths up to the selective wavelength transmitted through the nanowire.

主权项

1. A waveguide comprising a substrate, at least one upstanding nanowire protruding from the substrate, and a vertical photogate covering a lateral surface of the at least one upstanding nanowire; wherein the at least one upstanding nanowire comprises a pn-junction or a pin-junction; wherein the nanowire has a first effective refractive index, nw and a material surrounding at least a portion of the nanowire to form a cladding has a second effective refractive index, nc, and the first refractive index is larger than the second refractive index, nw>nc configured to create waveguiding properties of the waveguide.