Precursor composition for oxide semiconductor and method of manufacturing thin film transistor array panel using the same

摘要

Provided is a precursor composition for an oxide semiconductor. The precursor composition for the oxide semiconductor includes a metal complex compound formed by a metal ion and an organic ligand, wherein the precursor composition is represented by the following Formula 1.
MAn   (Formula 1)
Herein, M is a metal ion, A is an organic ligand which includes α-substituted carboxylate, and n is a natural number.

主权项

1. A method of manufacturing a thin film transistor array panel, comprising:
preparing a metal compound solution which comprises a metal complex compound formed by a metal ion and an organic ligand and a solvent; coating the metal compound solution on a substrate; preprocessing the metal compound solution coated on the insulation substrate by irradiating ultraviolet rays thereon; and heat-treating the preprocessed metal compound solution coated on the substrate, wherein the metal complex compound is represented by the following Formula 1:
MAn  (Formula 1) wherein M is the metal ion, A is the organic ligand and comprises α-substituted carboxylate, and n is a natural number.