发明名称 Semiconductor device and method of manufacturing the same
摘要 According to one embodiment, a semiconductor device includes a switch element provided in a surface area of a semiconductor substrate, a contact plug with an upper surface and a lower surface, and a function element provided on the upper surface of the contact plug. The lower surface of the contact plug is connected to the switch element. The upper surface of the contact plug has a maximum roughness of 0.2 nm or less.
申请公布号 US8754433(B2) 申请公布日期 2014.06.17
申请号 US201213708798 申请日期 2012.12.07
申请人 Kabushiki Kaisha Toshiba 发明人 Matsui Yukiteru;Minamihaba Gaku;Eda Hajime;Iwayama Masayoshi;Amano Minoru;Yoshikawa Masatoshi;Sato Motoyuki;Suguro Kyoichi;Kodera Masako
分类号 H01L33/00 主分类号 H01L33/00
代理机构 Knobbe, Martens, Olson & Bear LLP 代理人 Knobbe, Martens, Olson & Bear LLP
主权项 1. A method of manufacturing a semiconductor device, the method comprising: forming a contact plug by forming a first metal material; and polishing the first metal material by a first CMP-process and a second CMP-process until a roughness of an upper surface of the contact plug becomes 0.2 nm or less, and wherein the second CMP-process is executed by using an acid-slurry comprising a colloidal silica, and the colloidal silica comprises silica particles.
地址 Tokyo JP