Nonvolatile memory devices and methods of fabricating the same

摘要

Nonvolatile memory devices including a first interlayer insulating film and a second interlayer insulating film separated from each other and are stacked sequentially, a first electrode penetrating the first interlayer insulating film and the second interlayer insulating film, a resistance change film along a top surface of the first interlayer insulating film, side surfaces of the first electrode, and a bottom surface of the second interlayer insulating film, and a second electrode between the first interlayer insulating film and the second interlayer insulating film.

主权项

1. A nonvolatile memory device, comprising:
a first interlayer insulating film; a second interlayer insulating film on the first interlayer insulating film, the first and second interlayer insulating films separated from each other; a first electrode penetrating through or extending adjacent to the first interlayer insulating film and the second interlayer insulating film; a resistance change film on a top surface of the first interlayer insulating film and a bottom surface of the second interlayer insulating film and adjacent a side surface of the first electrode; a second electrode between the first interlayer insulating film and the second interlayer insulating film; and a two-way diode between the first electrode and the second electrode, wherein the diode is on the top surface of the first interlayer insulating film and the bottom surface of the second interlayer insulating film and is adjacent to at least one of the side surface of the first electrode and a side surface of the second electrode.