发明名称 Plasma processing apparatus
摘要 Provided is a plasma processing apparatus featuring highly improved plasma ignition property and ignition stability by defining a positional relationship between a dielectric and the slots. A plasma processing apparatus 11 includes a processing chamber 12 having a top opening; a dielectric 15 which has inclined surfaces 16a and 16b on a bottom surface thereof so that a thickness dimension is successively varied, and is disposed so as to close the top opening of the processing chamber 12; and an antenna 24disposed on a top surface of the dielectric 15, for supplying microwave to the dielectric 15, thereby generating plasma at the bottom surface of the dielectric 15. Further, the antenna 24 is provided with a plurality of slots 25positioned uprightly above the inclined surfaces 16a and 16b.
申请公布号 US8753475(B2) 申请公布日期 2014.06.17
申请号 US200912366907 申请日期 2009.02.06
申请人 Tokyo Electron Limited 发明人 Matsumoto Naoki;Yoshikawa Jun;Sasaki Masaru;Kato Kazuyuki;Shikata Masafumi;Takahashi Shingo
分类号 C23C16/00;C23F1/00;H01L21/306 主分类号 C23C16/00
代理机构 Pearne & Gordon LLP 代理人 Pearne & Gordon LLP
主权项 1. A plasma processing apparatus comprising: a processing chamber having a top opening; a dielectric which has inclined surfaces on a bottom surface thereof so that a thickness dimension of the dielectric is successively varied, and is disposed so as to close the top opening of the processing chamber; and an antenna disposed on a top surface of the dielectric, for supplying microwave to the dielectric, thereby generating plasma at the bottom surface of the dielectric, wherein a ring-shaped groove is formed in the bottom surface of the dielectric, and the inclined surfaces serve as an inner peripheral sidewall surface and an outer peripheral sidewall surface of the ring-shaped groove, if a radius of the dielectric is R, the ring-shaped groove is located only outside a position corresponding to R/4 from a center of the dielectric, the antenna is provided with a plurality of inner slot pairs and a plurality of outer slot pairs, the outer slots of the inner slot pairs are positioned uprightly above the inner peripheral sidewall surface of the ring-shaped groove, and outer slots of the outer slot pairs are positioned uprightly above the outer peripheral sidewall surface of the ring-shaped groove.
地址 Tokyo JP