Hybrid superconducting-magnetic memory cell and array

摘要

In one embodiment, the invention is a hybrid superconducting-magnetic memory cell and array. One embodiment of a memory cell includes a magnetoresistive element and at least one superconducting element wired in parallel with the magnetoresistive element. In a further embodiment, memory cells of the disclosed configuration are arranged to form a memory array.

主权项

1. A method for accessing a memory cell in a memory array comprising a plurality of memory cells, the method comprising:
suppressing a critical current of a superconducting element in a row of the memory array in which the memory cell resides, wherein the superconducting element is connected to a voltage source along a first path to pass a first current sourced from a current flowing along a read bit line associated with a column of the memory array in which the memory cell resides; measuring a resistance across the read bit line, where the resistance includes a resistance of the superconducting element and a resistance of a magnetoresistive element that is connected to the voltage source along a second path separate from the first path to pass a second current sourced from the current flowing along the read bit line; and detecting a binary state of the memory cell in accordance with the resistance.