| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device of an embodiment includes: a semiconductor layer made of p-type nitride semiconductor; an oxide layer formed on the semiconductor layer, the oxide layer being made of a crystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less; and a metal layer formed on the oxide layer. | ||
| 申请公布号 | US8754528(B2) | 申请公布日期 | 2014.06.17 |
| 申请号 | US201313871302 | 申请日期 | 2013.04.26 |
| 申请人 | Kabushiki Kaisha Toshiba | 发明人 | Saito Shinji;Sugai Maki;Muramoto Eiji;Nunoue Shinya |
| 分类号 | H01L33/40 | 主分类号 | H01L33/40 |
| 代理机构 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. | 代理人 | Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. |
| 主权项 | 1. A semiconductor device comprising: a p-type nitride semiconductor layer; a metal layer; and an oxide layer formed between the p-type nitride semiconductor layer and the metal layer, the oxide layer being made of a crystalline nickel oxide, and the oxide layer having a thickness of 3 nm or less. | ||
| 地址 | Minato-Ku JP | ||