Self aligned borderless contact

摘要

A method of fabricating a semiconductor structure having a borderless contact, the method including providing a first semiconductor device adjacent to a second semiconductor device, the first and second semiconductor devices being formed on a semiconductor substrate, depositing a non-conductive liner on top of the semiconductor substrate and the first and second semiconductor devices, depositing a contact level dielectric layer on top of the non-conductive liner, etching a contact hole in the contact-level dielectric between the first semiconductor device and the second semiconductor device, and selective to the non-conductive liner, converting a portion of the non-conductive liner exposed in the contact hole into a conductive liner; and forming a metal contact in the contact hole.

主权项

1. A method of fabricating a semiconductor structure having a borderless contact, the method comprising:
providing a first semiconductor device adjacent to a second semiconductor device, the first and second semiconductor devices being formed on a semiconductor substrate; depositing a non-conductive liner on top of the semiconductor substrate and the first and second semiconductor devices; depositing a contact level dielectric layer on top of the non-conductive liner; etching a contact hole in the contact-level dielectric between the first semiconductor device and the second semiconductor device, and selective to the non-conductive liner, to expose a first portion of the non-conductive liner; depositing a nitrogen absorption layer on top of the first portion of the non-conductive liner exposed within the contact hole; and performing a thermal anneal causing the nitrogen absorption layer to absorb nitrogen from the non-conductive liner, and causing an entire thickness of the first portion of the non-conductive liner to change from an insulator to a conductor.