Antifuse and method of making the antifuse

摘要

A method of making an antifuse includes providing a substrate having a bit line diffusion region and a capacitor diffusion region. A gate dielectric layer is formed over the substrate, and a word line is formed on the gate dielectric layer. An oxide layer is formed on the capacitor diffusion region, in a separate process step from forming the gate dielectric layer. A select line contact is formed above and contacting the oxide layer to form a capacitor having the oxide layer as a capacitor dielectric layer of the capacitor. The select line contact is configured for applying a voltage to cause permanent breakdown of the oxide layer to program the antifuse.

主权项

1. An antifuse, comprising:
a substrate having a bit line diffusion region and a capacitor diffusion region; a gate dielectric layer over the substrate; a word line on the gate dielectric layer; an oxide layer on the capacitor diffusion region and over a portion of the word line, the oxide layer being substantially thicker than the gate dielectric layer and extending continuously from the capacitor diffusion region to over the portion of the word line; and a select line contact above and contacting the oxide layer to form a capacitor having the oxide layer as a capacitor dielectric layer thereof, the select line contact configured for applying a voltage to cause permanent breakdown of the oxide layer to program the antifuse.