发明名称 Discontinuous patterned bonds for semiconductor devices and associated systems and methods
摘要 Discontinuous bonds for semiconductor devices are disclosed herein. A device in accordance with a particular embodiment includes a first substrate and a second substrate, with at least one of the first substrate and the second substrate having a plurality of solid-state transducers. The second substrate can include a plurality of projections and a plurality of intermediate regions and can be bonded to the first substrate with a discontinuous bond. Individual solid-state transducers can be disposed at least partially within corresponding intermediate regions and the discontinuous bond can include bonding material bonding the individual solid-state transducers to blind ends of corresponding intermediate regions. Associated methods and systems of discontinuous bonds for semiconductor devices are disclosed herein.
申请公布号 US8754424(B2) 申请公布日期 2014.06.17
申请号 US201113220462 申请日期 2011.08.29
申请人 Micron Technology, Inc. 发明人 Schellhammer Scott D.;Odnoblyudov Vladimir;Frei Jeremy S.
分类号 H01L33/00;H01L21/18;H01L21/20;H01L21/447;H01L23/495;H01L23/00 主分类号 H01L33/00
代理机构 Perkins Coie LLP 代理人 Perkins Coie LLP
主权项 1. A semiconductor device, comprising: a first substrate; a second substrate having a plurality of projections and a plurality of recesses, with individual recesses bounded by neighboring projections and having a closed end, at least one of the first and second substrates having a plurality of solid-state transducers, wherein individual solid-state transducers are disposed at least partially within corresponding recesses, and wherein the projections are directly adjacent to the first substrate; and a discontinuous bond between the first substrate and the second substrate, the discontinuous bond comprising a bonding material bonded to the second substrate at the closed end of the recesses, with the solid-state transducers disposed between the first substrate and the bonding material.
地址 Boise ID US