| 发明名称 |
Intra die variation monitor using through-silicon via |
| 摘要 |
An apparatus comprising connecting IDVMON monitors with through silicon vias (TSV) to allow the monitors to be connected to probe pads located on the backside of the wafer. Because the backside of the wafer have significantly more space than the front side, the probe pads for IDVMON can be accommodated without sacrificing the silicon area. |
| 申请公布号 |
US8754412(B2) |
申请公布日期 |
2014.06.17 |
| 申请号 |
US201213342226 |
申请日期 |
2012.01.03 |
| 申请人 |
International Business Machines Corporation |
发明人 |
Yu Xiaojun;Mocuta Anda C.;Kirihata Toshiaki |
| 分类号 |
H01L29/10 |
主分类号 |
H01L29/10 |
| 代理机构 |
|
代理人 |
MacKinnon Ian;Kellner Steven;Steinberg William |
| 主权项 |
1. An apparatus comprising:
at least two intra die variation monitors (IDVMONs); at least two through silicon vias (TSVs), wherein each of the at least two IDVMONs are embedded in each of the at least two TSVs; and at least two probe pads located on a backside of a wafer, wherein the at least two TSVs connect the at least two IDVMONs to the at least two probe pads.
|
| 地址 |
Armonk NY US |
