| 发明名称 | Carbon-based memory element | ||
| 摘要 | One embodiment of the disclosure can provide a storage layer of a resistive memory element comprising a resistance changeable material. The resistance changeable material can include carbon. Contact layers can be provided for contacting the storage layer. The storage layer can be disposed between a bottom contact layer and a top contact layer. The resistance changeable material can be annealed at a predetermined temperature over a predetermined annealing time for rearranging an atomic order of the resistance changeable material. | ||
| 申请公布号 | US8754392(B2) | 申请公布日期 | 2014.06.17 |
| 申请号 | US201113169171 | 申请日期 | 2011.06.27 |
| 申请人 | International Business Machines Corporation | 发明人 | Caimi Daniele;Eleftheriou Evangelos S.;Pozidis Charalampos;Rossel Christophe P.;Sebastian Abu |
| 分类号 | H01L29/02 | 主分类号 | H01L29/02 |
| 代理机构 | Patents on Demand P.A. | 代理人 | Patents on Demand P.A. ;Buchheit Brian K.;Garrett Scott M. |
| 主权项 | 1. A method comprising: providing a storage layer of a resistive memory element comprising a resistance changeable material, said resistance changeable material comprising carbon; providing contact layers for contacting the storage layer, wherein the storage layer is disposed between a bottom contact layer and a top contact layer; and annealing the resistance changeable material at a predetermined temperature over a predetermined annealing time for rearranging an atomic order of the resistance changeable material, wherein the annealing temperature is adapted to exclude conversion of sp3 state to a sp2 state of the carbon within the resistance changeable material. | ||
| 地址 | Armonk NY US | ||