| 发明名称 |
Method for fabricating novel semiconductor and optoelectronic devices |
| 摘要 |
A method for fabricating an integrated device, the method including, overlying a first crystalline layer onto a second crystalline layer to form a combined layer, wherein one of the first and second crystalline layers is an image sensor layer and at least one of the first and second crystalline layers has been transferred by performing an atomic species implantation, and wherein at least one of the first and second crystalline layers includes single crystal transistors. |
| 申请公布号 |
US8753913(B2) |
申请公布日期 |
2014.06.17 |
| 申请号 |
US201213422049 |
申请日期 |
2012.03.16 |
| 申请人 |
Monolithic 3D Inc. |
发明人 |
Or-Bach Zvi;Sekar Deepak C. |
| 分类号 |
H01L31/18 |
主分类号 |
H01L31/18 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for fabricating an integrated device, comprising:
overlying a first crystalline layer onto a second crystalline layer to form a combined layer, wherein one of the said first and second crystalline layers is an image sensor layer; and performing an atomic species implantation to transfer at least one of the said first and second crystalline layers; wherein at least one of the said first and second crystalline layers comprises single crystal transistors.
|
| 地址 |
San Jose CA US |
