FinFET structure having fully silicided fin

摘要

A semiconductor device which includes fins of a semiconductor material formed on a semiconductor substrate and then a gate electrode formed over and in contact with the fins. An insulator layer is deposited over the gate electrode and the fins. A trench opening is then etched in the insulator layer. The trench opening exposes the fins and extends between the fins. The fins are then silicided through the trench opening. Then, the trench opening is filled with a metal in contact with the silicided fins to form a local interconnect connecting the fins.

主权项

1. A method of manufacturing a semiconductor device comprising the steps of:
forming a plurality of fins on a semiconductor substrate, the fins comprising a semiconductor material and having first and second side surfaces, the first and second side surfaces having a bottom portion adjacent to the semiconductor substrate; forming a gate electrode over and in contact with each of the plurality of fins; forming first spacers on the gate electrode; forming a second spacer only on the first and second side surfaces, the second spacer being parallel to and covering only the bottom portion of the first and second side surfaces adjacent the semiconductor substrate; after forming the second spacer, depositing an insulator layer over the gate electrode and the plurality of fins; etching a trench opening in the insulator layer that exposes the plurality of fins and extends between the plurality of fins; siliciding the plurality of fins through the trench opening, the siliciding extending down to the second spacer on the first and second side surfaces such that the siliciding is spaced from the semiconductor substrate by the second spacer; and filling the trench opening with a metal in contact with the silicided fins to form a local interconnect connecting the plurality of fins.