Limiting flash memory over programming

摘要

Certain aspects of this disclosure relate to programming an at least one flash memory cell using an at least one programming pulse with a new programming voltage having a level. The level is maintained in at least one page in a block of a flash memory controller memory, wherein the level varies as a function of a number of programming cycles applied to the at least one flash memory cell.

主权项

1. A method, comprising:
programming at least one flash memory cell using at least one programming pulse having a voltage level obtained from a memory location, wherein said at least one flash memory cell is contained within a page of a non-volatile memory block including a plurality of pages, and wherein the voltage level is based, at least in part, on a count of programming pulses used to program memory cells of another page of said non-volatile memory block, and on a count of program and erase cycles applied to the at least one flash memory cell, the count of program and erase cycles corresponding to a cycling degradation age of the at least one flash memory cell, wherein the at least one programming pulse having the voltage level is applied in programming pages in said non-volatile memory block except for said another page of said non-volatile memory block, and wherein said memory location is contained within a first page of said non-volatile memory block.