3-dimensional non-volatile memory device including a selection gate having an L shape

摘要

A 3-dimensional (3-D) non-volatile memory device includes a first channel protruding from a substrate, a selection gate formed on sidewalls of the first channel and in an L shape, and a gate insulating layer interposed between the first channel and the selection gate and surrounding the first channel. A method of manufacturing a 3-D non-volatile memory device includes forming first channels protruding from a substrate, forming a first gate insulating layer surrounding the first channels, and forming first selection gates having an L shape on sidewalls of the first channels on which the first gate insulating layers are formed.

主权项

1. A 3-dimensional (3-D) non-volatile memory device, comprising:
a channel protruding from a substrate; a selection gate formed on sidewall of the channel and having an L shape; and a gate insulating layer interposed between the channel and the selection gate and surrounding the channel; and the selection gate includes a first region surrounding a side wall of the first channel and a second region protruding from the first region.