发明名称 |
Light emitting diode |
摘要 |
An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided. |
申请公布号 |
US8754438(B2) |
申请公布日期 |
2014.06.17 |
申请号 |
US201213400097 |
申请日期 |
2012.02.19 |
申请人 |
Advanced Optoelectronics Technology, Inc. |
发明人 |
Lin Ya-Wen;Huang Shih-Cheng;Tu Po-Min;Huang Chia-Hung;Yang Shun-Kuei |
分类号 |
H01L33/62 |
主分类号 |
H01L33/62 |
代理机构 |
Novak Druce Connolly Bove + Quigg LLP |
代理人 |
Novak Druce Connolly Bove + Quigg LLP |
主权项 |
1. An LED, comprising:
a substrate, having a top face and a bottom face; a buffer layer, disposed on the top face of the substrate; an epitaxial layer, disposed on the buffer layer, comprising:
a first N-type epitaxial layer and a second N-type epitaxial layer;a blocking layer, having patterned grooves, sandwiched between the first and the second N-type epitaxial layers, wherein the first and the second N-type epitaxial layers contacts to each other via a portion of the second N-type epitaxial layer in the patterned grooves;a light emitting layer, disposed on the second N-type epitaxial layer; anda P-type epitaxial layer, disposed on the light emitting layer; a conductive layer, disposed on the P-type epitaxial layer;
a P-type electrode disposed on the conductive layer; andan N-type electrode disposed on the blocking layer opposite to the P-type electrode, wherein the N-type electrode is separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact with the first N-type epitaxial layer.
|
地址 |
Hsinchu Hsien TW |