发明名称 Light emitting diode
摘要 An LED comprises a substrate, a buffer layer, an epitaxial layer and a conductive layer. The epitaxial layer comprises a first N-type epitaxial layer, a second N-type epitaxial layer, and a blocking layer with patterned grooves sandwiched between the first and second N-type epitaxial layers. The first and second N-type epitaxial layers make contact each other via the patterned grooves. Therefore, the LED enjoys a uniform current distribution and a larger light emitting area. A manufacturing method for the LED is also provided.
申请公布号 US8754438(B2) 申请公布日期 2014.06.17
申请号 US201213400097 申请日期 2012.02.19
申请人 Advanced Optoelectronics Technology, Inc. 发明人 Lin Ya-Wen;Huang Shih-Cheng;Tu Po-Min;Huang Chia-Hung;Yang Shun-Kuei
分类号 H01L33/62 主分类号 H01L33/62
代理机构 Novak Druce Connolly Bove + Quigg LLP 代理人 Novak Druce Connolly Bove + Quigg LLP
主权项 1. An LED, comprising: a substrate, having a top face and a bottom face; a buffer layer, disposed on the top face of the substrate; an epitaxial layer, disposed on the buffer layer, comprising: a first N-type epitaxial layer and a second N-type epitaxial layer;a blocking layer, having patterned grooves, sandwiched between the first and the second N-type epitaxial layers, wherein the first and the second N-type epitaxial layers contacts to each other via a portion of the second N-type epitaxial layer in the patterned grooves;a light emitting layer, disposed on the second N-type epitaxial layer; anda P-type epitaxial layer, disposed on the light emitting layer; a conductive layer, disposed on the P-type epitaxial layer; a P-type electrode disposed on the conductive layer; andan N-type electrode disposed on the blocking layer opposite to the P-type electrode, wherein the N-type electrode is separated from the second N-type epitaxial layer and has a portion extending into the patterned grooves to contact with the first N-type epitaxial layer.
地址 Hsinchu Hsien TW