Optical memory device and method of recording/reproducing information by using the same

摘要

An optical memory device and a method of recording/reproducing information by using the optical memory device. The optical memory device includes a substrate; a first barrier layer formed on the substrate; a quantum well layer; a second barrier layer; a quantum dot layer; and a third barrier layer. The quantum well layer has an energy band gap which is wider than that of the quantum dot layer, and the second barrier layer has an energy band gap which is wider than that of the quantum well layer, so that electrons in excitons which are generated in the quantum dot layer by light of a certain wavelength are captured by the quantum well layer to record information, and then, recorded information may be erased or reproduced by irradiating light of a certain wavelength to the optical memory device.

主权项

1. An optical memory device comprising:
a substrate; a first barrier layer formed on the substrate; a quantum well layer formed on the first barrier layer,
wherein the quantum well layer has an energy band gap which is narrower than an energy band gap of the first barrier layer; a second barrier layer formed on the quantum well layer,
wherein the second barrier layer has an energy band gap which is wider than the energy band gap of the quantum well layer, andwherein the energy band gap of the second barrier layer is narrower than the energy band gap of the first barrier layer; a quantum dot layer including a plurality of quantum dots formed on the second barrier layer,
wherein the quantum dot layer has an energy band gap which is narrower than the energy band gap of the quantum well layer; and a third barrier layer formed on the quantum dot layer, wherein the third barrier layer has an energy band gap which is wider than the energy band gap of the second barrier layer, and wherein a difference between a conduction band of the second barrier layer and a conduction band of the quantum dot layer is smaller than the energy band gap of the quantum dot layer.