发明名称 Semiconductor memory device
摘要 According to one embodiment, there is provided a semiconductor memory device including a memory cell array, a storage unit, a selection unit, a startup processing unit, and an operation control unit. The memory cell array includes memory cells. The storage unit stores a plurality of operating parameters. The selection unit accesses the storage unit and selects a first operating parameter for operating the memory cells from among the plurality of operating parameters stored in the storage unit, based on a first instruction input. The startup processing unit performs a power startup and reads out the first operating parameter from the storage unit and sets the first operating parameter so as to be ready for use, based on a second instruction input. The operation control unit uses the first operating parameter set by the startup processing unit in order to operate the memory cells.
申请公布号 US8755230(B2) 申请公布日期 2014.06.17
申请号 US201213358113 申请日期 2012.01.25
申请人 Kabushiki Kaisha Toshiba 发明人 Shinagawa Yuichi
分类号 G11C11/34;G11C16/04 主分类号 G11C11/34
代理机构 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P. 代理人 Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
主权项 1. A semiconductor memory device, comprising: a memory cell array which includes memory cells; a storage unit which stores a plurality of operating parameters; a selection unit which accesses the storage unit and selects a first operating parameter for operating the memory cells from among the plurality of operating parameters stored in the storage unit, based on a first instruction input; a startup processing unit which performs a power startup and reads out the first operating parameter from the storage unit and sets the first operating parameter so as to be ready for use, based on a second instruction input; and an operation control unit which uses the first operating parameter set by the startup processing unit in order to operate the memory cells.
地址 Tokyo JP
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