| 摘要 |
In a loadless 4T-SRAM constituted using vertical-type transistor SGTs, a small SRAM cell area is realized. In a static memory cell constituted using four MOS transistors, the MOS transistors are SGTs formed on a bulk substrate in which the drains, gates, and sources are arranged in the vertical direction. The gates of access transistors are shared, as a word line, among a plurality of cells adjacent to one another in the horizontal direction. One contact for the word line is formed for each group of cells, thereby realizing a CMOS-type loadless 4T-SRAM with a very small memory cell area. |
| 主权项 |
1. A semiconductor memory device, comprising:
a plurality of static memory cells, each including four MOS transistors arranged on a substrate; said four MOS transistors respectively functioning as first and second PMOS access transistors and as first and second NMOS driver transistors, said first and second PMOS access transistors for supplying an electric charge in order to maintain data in a memory cell and accessing the memory cell, said first and second NMOS driver transistors for driving storage nodes in order to read data from the respective said memory cell; wherein, in said first and second PMOS access transistors: a P-type first diffusion layer, a first pillar-shaped semiconductor layer, and a P-type second diffusion layer are arranged in a hierarchical manner in a vertical direction on the substrate, the first pillar-shaped semiconductor layer is arranged between the first diffusion layer formed at the bottom of the first pillar-shaped semiconductor layer and the second diffusion layer formed on the top of the first pillar-shaped semiconductor layer, and a first gate is formed on a sidewall of the first pillar-shaped semiconductor layer; wherein, in said first and second NMOS driver transistors: an N-type third diffusion layer, a second pillar-shaped semiconductor layer, and an N-type fourth diffusion layer are arranged in a hierarchical manner in the vertical direction on the substrate, the second pillar-shaped semiconductor layer is arranged between the third diffusion layer formed at the bottom of the second pillar-shaped semiconductor layer and the fourth diffusion layer formed on the top of the second pillar-shaped semiconductor layer, and a second gate is formed on a sidewall of the second pillar-shaped semiconductor layer; wherein said first PMOS access transistor and said first NMOS driver transistor are arranged adjacent to each other, wherein said second PMOS access transistor and said second NMOS driver transistor are arranged adjacent to each other, wherein a first well common to a plurality of memory cells for supplying potential to the substrate is formed on the substrate, wherein the P-type first diffusion layer formed at the bottom of said first PMOS access transistor and the N-type third diffusion layer formed at the bottom of said first NMOS driver transistor are connected to each other, wherein the P-type first diffusion layer and the N-type third diffusion layer connected to each other function as a first storage node for maintaining data stored in the memory cell, wherein, to prevent leakage between the N-type third diffusion layer or the P-type first diffusion layer and the first well, a first leak preventing diffusion layer having a conductivity type opposite to the first well is formed between the N-type third diffusion layer or the P-type first diffusion layer and the first well, so that the bottom of the first leak preventing diffusion layer becomes shallower than an element separation layer, wherein the first leak preventing diffusion layer is directly connected to the P-type first diffusion layer or the N-type third diffusion layer, wherein the P-type first diffusion layer formed at the bottom of said second PMOS access transistor, and the N-type third diffusion layer formed at the bottom of said second NMOS driver transistor are connected to each other, wherein the P-type first diffusion layer and the N-type third diffusion layer connected to each other function as a second storage node for maintaining data stored in the memory cell, wherein, to prevent leakage between the N-type third diffusion layer or the P-type first diffusion layer and the first well, a second leak preventing diffusion layer having a conductivity type opposite to the first well is formed between the N-type third diffusion layer or the P-type first diffusion layer and the first well, so that the bottom of the second leak preventing diffusion layer becomes shallower than the element separation layer, wherein the second leak preventing diffusion layer is directly connected to the P-type first diffusion layer or the N-type third diffusion layer, wherein gates of said first and second PMOS access transistors are connected to each other by a first gate line, and the first gate line forms a word line by connecting to gates of said first and second PMOS access transistors in two or more memory cells adjacent to one another, and wherein, for each group of memory cells adjacent to one another, a first contact is formed on the first gate line serving as the word line.
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