Hybrid interconnect structure for performance improvement and reliability enhancement

摘要

A method of forming a hybrid interconnect structure including dielectric spacers is provided. The method includes forming at least one opening in a dielectric material utilizing a patterned hard mask located on a surface of the dielectric material as a mask, wherein an undercut is present beneath said patterned hard mask. Next, a dense dielectric spacer is formed in the at least one opening and at least partially on exposed sidewalls of the dielectric material. A diffusion barrier and a conductive material are then formed within the at least one opening.

主权项

1. A method of forming an interconnect structure comprising:
forming at least one opening in a dielectric material of unitary composition utilizing a patterned hard mask located on a surface of said dielectric material of unitary composition as a mask, wherein an undercut is present beneath said patterned hard mask; forming a dense dielectric spacer in said at least one opening and at-least partially on a first portion of exposed sidewalls of said dielectric material of unitary composition wherein an air gap remains in the undercut; forming a diffusion barrier within said at least one opening on at least said dense dielectric spacer, wherein a first surface of the diffusion barrier directly contacts a surface of the dense dielectric spacer and wherein a second surface of the diffusion barrier directly contacts a second portion of said exposed sidewalls of the dielectric material of unitary composition; and forming a conductive material within said at least one opening on said diffusion barrier.