| 摘要 |
An objective of the present invention is to provide a sputtering target capable of forming a conductive metal oxide thin film having high light transmission and relatively high electric resistivity. The sputtering target includes: indium; first metal; second metal; and oxygen. The first metal is selected from zinc, tin and the combinations of the same, and the second metal is selected from aluminum, titanium, and the combinations of the same. When the sum atom contents of indium, the first metal, and the second metal is 100 at%, the sputtering target contains 10-20 at% of indium, 60-80 at% of the first metal, and 10-20 at% of the second metal. |
