| 摘要 |
A nitride semiconductor light emitting device which offers sufficient light output, and a manufacturing method for the nitride semiconductor light emitting device are provided,
the nitride semiconductor light emitting device has a first clad layer 13 including an n-type nitride semiconductor, an active layer 14 formed on the first clad layer 13, and including an In-containing nitride semiconductor, a GaN layer 17 formed on the active layer 14, a first AlGaN layer 18 formed on the GaN layer 17, and having a first Al composition ratio, a p-type second AlGaN layer 19 formed on the first AlGaN layer 18, having a second Al composition ratio higher than the first Al composition ratio, and containing a larger amount of Mg than the GaN layer 17 and the first AlGaN layer 18, and a second clad layer 20 formed on the second AlGaN layer 19, and including a p-type nitride semiconductor. |
