| 摘要 |
The present invention relates to a light emitting diode and a manufacturing method thereof and, more particularly, to a DBR which is formed under a top electrode to increase the light emission efficiency of the light emitting diode. The light emitting diode according to the present invention includes the DBR which is located on the lower side of the top electrode. The DBR can be grown under the environment which is used when the structure of the light emitting diode is grown. The intensity of light emitted to the outside of the light emitting diode is increased by reflecting light absorbed in the top electrode by the DBR. |
