IO ESD device and methods for forming the same

摘要

A method includes forming an ESD diode including performing an epitaxy growth to form an epitaxy region comprising silicon and substantially free from germanium. The epitaxy region is doped with a p-type impurity to form a p-type region, wherein the p-type region forms an anode of the ESD diode.

主权项

1. A device comprising:
a semiconductor substrate; an n-well region in the semiconductor substrate; and a p-type semiconductor region over the n-well region, wherein the p-type semiconductor region and the n-well region form a p-n junction of an Electro-Static Discharge (ESD) diode, wherein the p-type semiconductor region is substantially free from germanium, and wherein the p-type semiconductor region is electrically connected to a first one of an electrical ground and a positive power supply; a first semiconductor fin and a second semiconductor fin on opposite ends of the p-type semiconductor region, wherein the first semiconductor fin and the second semiconductor fin are aligned to a straight line; a first gate dielectric on a top surface and sidewalls of the first semiconductor fin; a first gate electrode over the first gate dielectric; and an n-type pickup region at a surface of, and electrically coupled to, the n-well region, wherein the n-type pickup region is electrically connected to a second one of the electrical ground and the positive power supply.