High density thyristor random access memory device and method

摘要

Memory devices and methods of making memory devices are shown. Methods and configurations as shown provide folded and vertical memory devices for increased memory density. Methods provided allow trace wiring in a memory array to be formed on or near a surface of a memory device.

主权项

1. A memory cell, comprising:
a first type doped semiconductor base having two upward facing ends and a folded conduction path therebetween; a pair of second type doped semiconductor structures coupled vertically to the first type doped semiconductor base to form a first and second p-n junction along the conduction path; a first type doped semiconductor top structure to form a third p-n junction along the conduction path; and a gate located only between the first and second p-n junctions, wherein the gate is adjacent to at least one side of the first type doped semiconductor base.