| 摘要 |
An apparatus for producing multicrystalline silicon ingots by the induction method comprises an enclosure, which includes means for start-up heating of silicon and a cooled crucible enveloped by an inductor. The crucible has a movable bottom and four walls consisting of sections spaced apart by vertically extending slots, means for moving the movable bottom, and a controlled cooling compartment arranged under the cooled crucible. The inside face of the crucible defines a melting chamber of a rectangular or square cross-section. The walls of the cooled crucible extend outwards at least from the inductor toward the lowest portion of the cooled crucible to thereby expand the melting chamber, and the angle ß of expanding the melting chamber is defined by the equation ß = arctg [2 · (k - 1.35 · 10 3 · b ) / d], where d is the dimension of the smaller side of the rectangle or of the side of the square of the cross-section of the melting chamber at the inducer level, b is the dimension of the adjoining side of the cross-section of the melting chamber at the inducer level, k is an empirical coefficient, which is 1.5 to 2. The apparatus makes it possible to decrease silicon melt spills and to increase the quality of multicrystalline silicon thus produced. |
