SUBSTRATE FOR GROWING SEMICONDUCTOR, LIGHT EMITTING DIODE USING THE SUBSTRATE AND MANUFACTURING METHOD THEREOF

摘要

The present invention relates to a substrate for growing semiconductor which minimizes the transmission and the generation of dislocations due to the growth of a semiconductor layer by forming a growth prevention layer in the parietal region of a recess part formed in a surface, and a light emitting diode including the same and a manufacturing method thereof. When the semiconductor layer is formed in the substrate for growing semiconductor, the dislocations in a growth surface direction are reduced, thereby minimizing the transmission of the dislocations and forming a high quality semiconductor layer.