| 摘要 |
The present invention relates to an electrostatic discharge protection device. For example, the present invention relates to a device for protecting an IC, which has a supply voltage terminal, a ground voltage terminal and an output terminal, from electrostatic discharge. Disclosed is an electrostatic discharge protection device which comprises at least two n-MOSFET units which are connected between the supply voltage terminal and the ground voltage terminal in series. The n-MOSFET unit includes n-MOSFETs which are connected to each other in parallel. A drain electrode and a source electrode which connect the n-MOSFET units are connected to the output terminal, respectively. The body and the gate of the n-MOSFET unit are connected to the ground voltage terminal, respectively. According to the embodiment, costs arising from a trial and error process can be reduced by providing an electrostatic discharge protection device which has constant tolerance to electrostatic discharge without getting affected by the design of an IC. |
