SEMICONDCUTOR DEVICE AND MANUFACTURING METHOD THEREOF

摘要

Disclosed is a manufacturing method of a semiconductor device. The method comprises forming an element separator, on a substrate, which defines active regions having first regions and a second region between the first regions; forming, on the substrate, a first trench extended in a first direction and crossing the active regions, and a pair of second trenches connected to the bottom of the first trench and extended in the first direction at both sides of the second region; and forming gates within the second trenches.