SEMICONDUCTOR DEVICE FOR SURGE PROTECTION AND METHOD FOR MANUFACTURING THEREOF

摘要

The present invention relates to a semiconductor device for surge protection having low junction capacitance and a method for manufacturing the same. More specifically, a diode having low junction capacitance and a TVS diode having excellent surge protection or a Zener diode are manufactured on a separate substrate. Each chip is mounted on the lead of a lead frame for a package. A wire bonding between the chips connect the chips. According to the present invention, a surge protection diode having low junction capacitance can be manufactured by a simple manufacturing process and a high performance surge protection device can be realized with low process costs.