| 摘要 |
The invention relates to a dark-field semi-conductor wafer inspection device including, in the following order, a light source for emitting an incident beam to a wafer along a first axis, a concentrator (7) that is symmetrical in relation to a plane passing through the first and second axes and is provided with a mirror that is elliptically cut along a plane perpendicular to an axis perpendicular to the first axis and has a generator parallel to the first axis, parallel first and second slits (13, 14) being set up side-ways in first and second portions (9, 10) of the concentrator at the points for concentrating the light that is scattered by the wafer and reflected by the second and first portions of the concentrator, respectively, and a photomultiplier using a slit. |
