| 摘要 |
A manufacturing method of a semiconductor device includes: forming an insulating layer above a substrate; forming a recessed section in the insulating layer; forming, on the insulating layer, a mask pattern having a first opening which exposes the recessed section, and a second opening which is arranged outside the first opening and does not expose the recessed section; forming a first conductive member and a second conductive member by respectively depositing a conductive material in the first opening and the second opening; and polishing and removing the first conductive member and the second conductive member on the upper side of the insulating layer so as to leave the first conductive member in the recessed section. |
