| 摘要 |
The present invention relates to a plasma chemical vapor deposition apparatus which comprises a vacuum chamber; a vacuum adjusting unit for adjusting the degree of vacuum inside the vacuum chamber; a gas supply unit for supplying a process gas into the vacuum chamber; at least three film forming rolls which are adjacently arranged in the vacuum chamber to rotate and has outer circumferential sides around which a substrate is wound; a substrate transfer unit for transferring the substrate; a magnetic field generating member which is arranged in an inside of at least one film forming roll among the film forming rolls to generate a magnetic field for forming plasma on an area where the film forming rolls are close to each other; and a power supplying unit for supplying power to the film forming rolls. Accordingly, the plasma chemical vapor deposition device capable of forming a film at a high speed and minimizing the size of the device and the increase of manufacturing costs. |
