| 摘要 |
The present invention relates to a semiconductor device and a method for manufacturing the same and, more specifically, to a technique capable of solving a bridge between metal wirings by forming a metal wiring in a multi-layer form. The semiconductor device, according to an embodiment of the present invention, comprises: a first metal wiring layer including a first metal wiring shape in a damascene structure for supplying a first signal to at least one of a plurality of lower electrode that performs a same function on the upper part of a semiconductor substrate; and a second metal wiring layer which supplies a second signal to the other one of the plurality of lower electrodes, and includes a second metal wiring pattern in a stack structure formed on the upper part of the first metal wiring layer. |
