PREPARING METHOD OF METAL-DOPED GALLIUM IRON OXIDE THIN FILM AND METAL-DOPED GALLIUM IRON OXIDE THIN FILM USING THE SAME

摘要

The present application relates to a manufacturing method of a gallium iron oxide thin film doped with a metal and a gallium iron oxide thin film doped by a metal manufactured by the method. The gallium iron oxide thin film doped with a metal of the present application can significantly reduce a leakage current generated from the gallium iron oxide thin film doped with a metal, and can adjust properties of a carrier at the same time. These results suggest a possibility of developing a new type of material that exhibits magnetization at room temperature and has adjustable carrying properties.