发明名称 SEMICONDUCTOR MATERIAL
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor material (such as photocatalyst) having wide wavelength region in which it can be used efficiently compared with ZnO in long wavelength side, excellent in chemical stability compared with ZnSe, CdS and CdO, and having low toxicity.SOLUTION: There is provided a semiconductor material represented by the composition formula (1) and having a wurtzite structure or a wurtzite superstructure. (1-x)ZnO x(ABO)(1), where A and B are elements may compose ABOtype composite oxide, A is a +1 valent element, B is a +3 valent element and x is the number of 0.01 to 0.99.
申请公布号 JP2014108917(A) 申请公布日期 2014.06.12
申请号 JP20120265431 申请日期 2012.12.04
申请人 ASAHI GLASS CO LTD;OSAKA UNIV 发明人 KAWAI YOHEI;KOMATA TAKAHISA;ARIMA YUTA;SUZUKI ISSEI
分类号 C01G9/00;B01J23/66;B01J35/02 主分类号 C01G9/00
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