| 发明名称 |
Optical Filtering Device, Defect Inspection Method and Apparatus Therefor |
| 摘要 |
An optical filtering device and an optical inspection apparatus for detecting a defect in a high sensitivity using an optical filtering device which includes a shutter array formed in a two-dimensionally on an optically opaque thin film produced on a SOI wafer and the SOI wafer is removed at portions thereof on the lower side of the shutter patterns to form perforation portions while working electrodes are formed at the remaining portion of the SOI wafer, a glass substrate having electrode patterns formed on the surface thereof and having the shutter array mounted thereon, and a power supply section for supplying electric power to the electrode patterns formed on the glass substrate and the working electrodes of the SOI wafer. And the working electrodes is controlled to cause the shutter patterns to carry out opening and closing movements with respect to the perforation portions to carry out optical filtering. |
| 申请公布号 |
US2014160471(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201213983310 |
申请日期 |
2012.02.03 |
| 申请人 |
Ueno Taketo;Nakata Toshihiko;Shibata Yukihiro;Matsumoto Shun'ichi;Taniguchi Atsushi;Toshiyoshi Hiroshi;Takahashi Takuya;Motohara Kentaro |
发明人 |
Ueno Taketo;Nakata Toshihiko;Shibata Yukihiro;Matsumoto Shun'ichi;Taniguchi Atsushi;Toshiyoshi Hiroshi;Takahashi Takuya;Motohara Kentaro |
| 分类号 |
G02B26/02;G01N21/95 |
主分类号 |
G02B26/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. An optical filtering device, comprising:
a shutter array wherein shutter patterns are formed in a two-dimensionally arrayed relationship on an optically opaque thin film produced on a SOI wafer and the SOI wafer is removed at portions thereof on the lower side of the shutter patterns to form perforation portions while working electrodes are formed at the remaining portion of the SOI wafer; a glass substrate having electrode patterns formed on the surface thereof and having the shutter array mounted thereon; and a power supply section for supplying electric power to the electrode patterns formed on the glass substrate and the working electrodes of the SOI wafer, wherein the electric power to be supplied from the power supply section to the electrode patterns and the working electrodes is controlled to cause the shutter patterns formed in the two-dimensionally arrayed relationship to carry out opening and closing movements with respect to the perforation portions, and wherein the shutter patterns have a protrusion at an end portion thereof.
|
| 地址 |
Tokyo JP |
