Conformal Doping

摘要

Methods for doping a three-dimensional semiconductor structure are disclosed. A conformal coating is formed on the three-dimensional semiconductor structure by Atomic Layer Deposition, and subsequent annealing causes dopant atoms to migrate into the three-dimensional semiconductor structure. Any residual conformal coating is then removed by etching. The semiconductor can be a type IV semiconductor such as Si, SiC, SiGe, or Ge, for which Sb and Te are suitable dopants. Sb and Te can be provided from a Ge2Sb2Te5 conformal coating. The semiconductor can also be a type III-V semiconductor such as InGaAs, GaAs, InAs, or GaSb, for which Sn and S are suitable dopants. Sn and S can be provided from a SnS conformal coating. The dopant concentration can be adjusted by precise control over the number of monolayers deposited in a conformal coating layer deposited by ALD.

主权项

1. A method for doping a three-dimensional semiconductor structure comprising
forming a conformal coating comprising one or more dopant atoms on the three-dimensional semiconductor structure by Atomic Layer Deposition, annealing the conformal coating and three-dimensional semiconductor structure such that the one or more dopant atoms migrate into the three-dimensional semiconductor structure, and removing any residual conformal coating by etching.