METHOD FOR PRODUCING SEMICONDUCTOR DEVICE

摘要

In the present invention, an insulating film (2) is formed on the primary surface of a semiconductor substrate (1) having an active region and a termination region. An aperture (3) is formed by etching the insulating film (2) on the active region. A diffusion layer (7) is formed at the active region by using the insulating film (2) as a mask, and injecting an impurity to the semiconductor substrate (1) from a direction inclined at least 20° from the direction normal to the primary surface of the semiconductor substrate (1) while rotating the semiconductor substrate (1). The diffusion layer (7) extends below the insulating film (2) at the termination region side of the aperture (3).