| 摘要 |
<p>This method for production of a semiconductor device has the steps of preparing a semiconductor substrate (10) in which a first semiconductor layer (12) formed on a substrate (11), forming a first recessed portion (12a) in the first semiconductor layer, forming a plurality of trenches (15) in the first semiconductor layer within the first recessed portion, epitaxially growing a second semiconductor layer (16) to fill in the trenches and the recessed portion, forming an SJ structure having a PN columns comprising the first semiconductor layer between the plurality of trenches and the second semiconductor layer within the trenches, forming over the SJ structure a channel layer (17) and a source region (18) contacting the channel layer, forming a gate electrode (23) on an intervening gate insulation film (22) over the channel layer, forming a source electrode (25) that connects to the source region, and forming a drain electrode (26) on the back surface of the substrate, to form a vertical MOSFET.</p> |
