| 摘要 |
The purpose of the present invention is to put an injection of an impurity using plasma doping to practical use. A plasma doping device (10) for adding an impurity to a semiconductor substrate (W) includes a chamber (12), a gas supply unit (14) configured for supplying gas to the chamber (12), and a plasma source (16) for generating plasma of the supplied gas in the chamber (12). The mixed gas containing material gas containing an impurity element to be added to the semiconductor substrate (W), hydrogen gas, and diluent gas for diluting the material gas is supplied to the chamber (12). |
