| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a semiconductor device comprising a diode and a transistor which have a low current density in a main electrode.SOLUTION: The semiconductor device is lateral and comprises a diode and a transistor that are monolithically, electrically connected in parallel. In the semiconductor device, a principal current flows through a principal surface side. The diode and the transistor share a main electrode that applies a main electric current. The shared main electrode applies the main electric current alternately to the diode and the transistor.</p> |
