METHOD OF GROWING GALLIUM NITRIDE BASED SEMICONDUCTOR LAYERS AND METHOD OF FABRICATING LIGHT EMITTING DEVICE THEREWITH

摘要

Exemplary embodiments of the present invention relate to a method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, including disposing a substrate in a chamber, growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure, growing a gallium nitride-based active layer on the first conductivity-type gallium nitride-based semiconductor layer at a second chamber pressure higher than the first chamber pressure, and growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure lower than the second chamber pressure.

主权项

1. A method of growing gallium nitride-based semiconductor layers through metal-organic chemical vapor deposition, the method comprising:
disposing a substrate in a chamber; growing a first conductivity-type gallium nitride-based semiconductor layer on the substrate at a first chamber pressure; growing a gallium nitride-based active layer on the first conductivity-type gallium nitride-based semiconductor layer at a second chamber pressure higher than the first chamber pressure; and growing a second conductivity-type gallium nitride-based semiconductor layer on the active layer at a third chamber pressure lower than the second chamber pressure, wherein the first, second, and third chamber pressures are lower than 760 Torr.