| 发明名称 |
SEMICONDUCTOR LIGHT-EMITTING DEVICE AND METHOD FOR MANUFACTURING THE SAME |
| 摘要 |
A method for manufacturing semiconductor light-emitting devices comprising the steps of: providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface. |
| 申请公布号 |
US2014162386(A1) |
申请公布日期 |
2014.06.12 |
| 申请号 |
US201213707168 |
申请日期 |
2012.12.06 |
| 申请人 |
EPISTAR CORPORATION |
发明人 |
HUANG Chien-Fu;Chen Yi-Ming;Lai Yi-Tang;Hsu Chia-Liang;Yang Tsung-Hsien;Hsu Tzu-Chieh |
| 分类号 |
H01L33/00 |
主分类号 |
H01L33/00 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for manufacturing semiconductor light-emitting devices, comprising the steps of:
providing a multi-layer semiconductor film comprising a surface; roughening the surface of the multi-layer semiconductor film to form a scattering surface; re-growing a semiconductor layer on the scattering surface; and roughening the semiconductor layer to form a sub-scattering portion on the scattering surface; wherein the sub-scattering portion is structurally smaller than the scattering surface.
|
| 地址 |
Hsinchu TW |
