发明名称 |
MANUFACTURING METHOD FOR SOLAR CELL AND SOLAR CELL MANUFACTURING SYSTEM |
摘要 |
The invention includes: a first process of forming a texture structure on both surfaces of a semiconductor substrate of a first conductivity type; a second process of measuring a reflectance distribution of the both surfaces of the semiconductor substrate on which the texture structure is formed; a third process of forming an impurity diffusion layer, in which an impurity element of a second conductivity type is diffused, on one of the both surfaces of the semiconductor substrate which is narrower in the reflectance distribution; a fourth process of forming, on the impurity diffusion layer, a light receiving surface-side electrode having a predetermined pattern and electrically connected to the impurity diffusion layer; and a fifth process of forming a back surface-side electrode on another of the both surfaces of the semiconductor substrate which is wider in the reflectance distribution. |
申请公布号 |
US2014162383(A1) |
申请公布日期 |
2014.06.12 |
申请号 |
US201114233895 |
申请日期 |
2011.08.02 |
申请人 |
Karakida Shoichi |
发明人 |
Karakida Shoichi |
分类号 |
H01L21/66;H01L31/0236 |
主分类号 |
H01L21/66 |
代理机构 |
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代理人 |
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主权项 |
1. A manufacturing method for a solar cell comprising:
a first process of forming a texture structure on both surfaces of a semiconductor substrate of a first conductivity type; a second process of measuring a reflectance distribution of the both surfaces of the semiconductor substrate on which the texture structure is formed; a third process of forming an impurity diffusion layer, in which an impurity element of a second conductivity type is diffused, on one of the both surfaces of the semiconductor substrate which is narrower in the reflectance distribution; a fourth process of forming, on the impurity diffusion layer, a light receiving surface-side electrode having a predetermined pattern and electrically connected to the impurity diffusion layer; and a fifth process of forming a back surface-side electrode on another of the both surfaces of the semiconductor substrate which is wider in the reflectance distribution, wherein the fourth process comprises: identifying a first defective appearance region that is attributed to a formation state of the texture structure on a side of the one surface of the semiconductor substrate; determining an orientation of the light receiving surface-side electrode from among a plurality of orientations in which the light receiving surface-side electrode is potentially arranged, such that a larger area of overlap between the first defective appearance region and the pattern of the light receiving surface-side electrode is obtained; and forming the light receiving surface-side electrode.
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地址 |
Chiyoda-ku JP |