发明名称 MANUFACTURING METHOD FOR SOLAR CELL AND SOLAR CELL MANUFACTURING SYSTEM
摘要 The invention includes: a first process of forming a texture structure on both surfaces of a semiconductor substrate of a first conductivity type; a second process of measuring a reflectance distribution of the both surfaces of the semiconductor substrate on which the texture structure is formed; a third process of forming an impurity diffusion layer, in which an impurity element of a second conductivity type is diffused, on one of the both surfaces of the semiconductor substrate which is narrower in the reflectance distribution; a fourth process of forming, on the impurity diffusion layer, a light receiving surface-side electrode having a predetermined pattern and electrically connected to the impurity diffusion layer; and a fifth process of forming a back surface-side electrode on another of the both surfaces of the semiconductor substrate which is wider in the reflectance distribution.
申请公布号 US2014162383(A1) 申请公布日期 2014.06.12
申请号 US201114233895 申请日期 2011.08.02
申请人 Karakida Shoichi 发明人 Karakida Shoichi
分类号 H01L21/66;H01L31/0236 主分类号 H01L21/66
代理机构 代理人
主权项 1. A manufacturing method for a solar cell comprising: a first process of forming a texture structure on both surfaces of a semiconductor substrate of a first conductivity type; a second process of measuring a reflectance distribution of the both surfaces of the semiconductor substrate on which the texture structure is formed; a third process of forming an impurity diffusion layer, in which an impurity element of a second conductivity type is diffused, on one of the both surfaces of the semiconductor substrate which is narrower in the reflectance distribution; a fourth process of forming, on the impurity diffusion layer, a light receiving surface-side electrode having a predetermined pattern and electrically connected to the impurity diffusion layer; and a fifth process of forming a back surface-side electrode on another of the both surfaces of the semiconductor substrate which is wider in the reflectance distribution, wherein the fourth process comprises: identifying a first defective appearance region that is attributed to a formation state of the texture structure on a side of the one surface of the semiconductor substrate; determining an orientation of the light receiving surface-side electrode from among a plurality of orientations in which the light receiving surface-side electrode is potentially arranged, such that a larger area of overlap between the first defective appearance region and the pattern of the light receiving surface-side electrode is obtained; and forming the light receiving surface-side electrode.
地址 Chiyoda-ku JP